Invention Grant
- Patent Title: Atomic layer etching methods and apparatus
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Application No.: US15849306Application Date: 2017-12-20
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Publication No.: US10692724B2Publication Date: 2020-06-23
- Inventor: David Smith , Thorsten Lill , Andreas Fischer
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Penilla IP, APC
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/311 ; H01J37/32 ; H01L21/768 ; H01L21/66
Abstract:
A method for performing atomic layer etching of a surface of a substrate is provided, including: performing a surface conversion operation by exposing the surface of the substrate to a surface conversion reactant; performing a ligand exchange operation by exposing the surface of the substrate to a ligand containing reactant; performing a desorption operation that effects removal of surface species from the surface of the substrate; performing a purge operation; repeating the surface conversion operation, the ligand exchange operation, the desorption operation, and the purge operation, for a predefined number of cycles.
Public/Granted literature
- US20180182634A1 ATOMIC LAYER ETCHING METHODS AND APPARATUS Public/Granted day:2018-06-28
Information query
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