Invention Grant
- Patent Title: Polycrystalline semiconductor nanostructured material
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Application No.: US14950639Application Date: 2015-11-24
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Publication No.: US10692718B2Publication Date: 2020-06-23
- Inventor: Pauline Serre , Thierry Baron , Celine Ternon
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CNRS Centre National de la Recherche Scientifique , INSTITUT POLYTECHNIQUE DE GRENOBLE
- Applicant Address: FR Paris FR Paris FR Grenoble
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CNRS Centre National de la Recherche Scientifique,INSTITUT POLYTECHNIQUE DE GRENOBLE
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CNRS Centre National de la Recherche Scientifique,INSTITUT POLYTECHNIQUE DE GRENOBLE
- Current Assignee Address: FR Paris FR Paris FR Grenoble
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@59c63c1
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; B82Y10/00 ; H01L29/41 ; H01L29/16 ; B82Y40/00 ; H01L29/10
Abstract:
A method for producing a network of nanostructures from at least one semiconductor material, including a step of forming nanostructures on the surface of a substrate, at least a part of the nanostructures having areas of contact between each other, comprising, in sequence and after the step of forming: a step of deoxidising the surface of the nanostructures and a step of reinforcing the bond between the nanostructures at the contact areas.
Public/Granted literature
- US20160148807A1 POLYCRYSTALLINE SEMICONDUCTOR NANOSTRUCTURED MATERIAL Public/Granted day:2016-05-26
Information query
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