Invention Grant
- Patent Title: Minimization of carbon loss in ALD SiO2 deposition on hardmask films
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Application No.: US16458818Application Date: 2019-07-01
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Publication No.: US10692717B2Publication Date: 2020-06-23
- Inventor: Douglas Walter Agnew , Ishtak Karim
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Penilla IP, APC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/32 ; H01L21/033
Abstract:
A method for defining thin film layers on a surface of a substrate includes exposing the surface of the substrate to a first precursor via a first plasma to allow the first precursor to be absorbed by the surface of the substrate. A second precursor that is different from the first precursor is applied to the surface of the substrate via a second plasma. The second precursor is a Carbon dioxide precursor that releases sufficient oxygen radicals to react with the first precursor to form an oxide film layer on the surface of the substrate.
Public/Granted literature
- US20200027718A1 Minimization of Carbon Loss in ALD SiO2 Deposition on Hardmask Films Public/Granted day:2020-01-23
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