Invention Grant
- Patent Title: Sputtering cathode, sputtering device, and method for producing film-formed body
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Application No.: US16297121Application Date: 2019-03-08
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Publication No.: US10692708B2Publication Date: 2020-06-23
- Inventor: Hiroshi Iwata , Toshiyuki Nedu , Yuta Takakuwa , Naoya Okada , Ippei Sato , Naonori Shibata , Keiichi Hashimoto
- Applicant: Keihin Ramtech Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: KEIHIN RAMTECH CO., LTD.
- Current Assignee: KEIHIN RAMTECH CO., LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Potomac Law Group, PLLC
- Agent Kenneth Fagin
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@67b9b772 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7f756f46
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C23C14/35 ; C23C14/56

Abstract:
This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.
Public/Granted literature
- US20190203346A1 Sputtering Cathode, Sputtering Device, and Method for Producing Film-Formed Body Public/Granted day:2019-07-04
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