Invention Grant
- Patent Title: RF substrate bias with high power impulse magnetron sputtering (HIPIMS)
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Application No.: US13859854Application Date: 2013-04-10
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Publication No.: US10692707B2Publication Date: 2020-06-23
- Inventor: Jurgen Weichart , Stanislav Kadlec
- Applicant: OC Oerlikon Balzers AG
- Applicant Address: CH Trubbach
- Assignee: EVATEC AG
- Current Assignee: EVATEC AG
- Current Assignee Address: CH Trubbach
- Agency: Pearne & Gordon LLP
- Main IPC: H01J37/34
- IPC: H01J37/34 ; H01J37/32 ; C23C14/34 ; C23C14/35

Abstract:
An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.
Public/Granted literature
- US20130220802A1 RF SUBSTRATE BIAS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS) Public/Granted day:2013-08-29
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