Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16212520Application Date: 2018-12-06
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Publication No.: US10692586B2Publication Date: 2020-06-23
- Inventor: Jae Hwan Seo , Sung Soo Chi
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@22e4e6d9
- Main IPC: G11C29/50
- IPC: G11C29/50 ; G11C11/4074 ; G11C11/4094 ; G11C11/4091 ; G11C11/4076

Abstract:
A semiconductor device is disclosed, which is configured to perform a test using various conditions during a test mode. The semiconductor device includes a voltage generation circuit configured to output 2n (n is an integer of n≥2) bit-line precharge voltages through different power-supply lines, based on a mode control signal, and a sense amplifier configured to receive the bit-line precharge voltages from the voltage generation circuit, and supply the 2n bit-line precharge voltages to corresponding bit lines in units of 2n successive bit-lines within the same cell array.
Public/Granted literature
- US20200043566A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-02-06
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