Invention Grant
- Patent Title: Defect injection structure and mechanism for magnetic memory
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Application No.: US16147257Application Date: 2018-09-28
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Publication No.: US10692556B2Publication Date: 2020-06-23
- Inventor: Michail Tzoufras , Marcin Gajek
- Applicant: SPIN MEMORY, INC.
- Applicant Address: US CA Fremont
- Assignee: SPIN MEMORY, INC.
- Current Assignee: SPIN MEMORY, INC.
- Current Assignee Address: US CA Fremont
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/04 ; H01L43/06 ; H01L27/22 ; G11C11/18 ; G11C19/08 ; H01F10/32 ; H01L43/10

Abstract:
The various implementations described herein include magnetic memory devices and systems, and methods for injecting defects into the devices and systems. In one aspect, a magnetic memory device comprises a non-magnetic cylindrical core, a first portion, and a second portion. The core is configured to receive a current. The first portion surrounds the core and is configured to introduce magnetic instabilities into the second portion. The second portion is adjacent to and arranged in a stack with respect to the first portion. The second portion also surrounds the core and is configured to store information based on a respective position of the magnetic instabilities. The second portion comprises a first plurality of magnetic layers and a first plurality of non-magnetic layers. Respective magnetic layers of the first plurality of magnetic layers are separated by respective non-magnetic layers of the plurality of non-magnetic layers.
Public/Granted literature
- US20200105325A1 Defect Injection Structure and Mechanism for Magnetic Memory Public/Granted day:2020-04-02
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