Invention Grant
- Patent Title: Methods of command based and current limit controlled memory device power up
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Application No.: US16137133Application Date: 2018-09-20
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Publication No.: US10692544B2Publication Date: 2020-06-23
- Inventor: Ted Pekny , Jeff Yu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C7/20 ; G06F1/3234

Abstract:
Methods for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.
Public/Granted literature
- US20190027196A1 METHODS OF COMMAND BASED AND CURRENT LIMIT CONTROLLED MEMORY DEVICE POWER UP Public/Granted day:2019-01-24
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