Invention Grant
- Patent Title: Metal cut optimization for standard cells
-
Application No.: US15907689Application Date: 2018-02-28
-
Publication No.: US10691849B2Publication Date: 2020-06-23
- Inventor: Cheok-Kei Lei , Chi-Lin Liu , Hui-Zhong Zhuang , Zhe-Wei Jiang , Chi-Yu Lu , Yi-Hsin Ko
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F30/327 ; H01L23/52 ; H01L23/522 ; G06F30/392 ; G06F30/398

Abstract:
The present disclosure describes a method for optimizing metal cuts in standard cells. The method includes placing a standard cell in an layout area and inserting a metal cut along a metal interconnect of the standard cell at a location away from a boundary of the standard cell. The method further includes disconnecting, at the location, a metal portion of the metal interconnect from a remaining portion of the metal interconnect based on the metal cut.
Public/Granted literature
- US20190095552A1 Metal Cut Optimization for Standard Cells Public/Granted day:2019-03-28
Information query