Invention Grant
- Patent Title: Read operation method of nonvolatile memory, memory system including the nonvolatile memory, and operation method of the memory system
-
Application No.: US15846473Application Date: 2017-12-19
-
Publication No.: US10691346B2Publication Date: 2020-06-23
- Inventor: Il-su Han
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@68a16fd0
- Main IPC: G06F11/07
- IPC: G06F11/07 ; G06F3/06 ; G11C7/00 ; G11C11/56 ; G06F11/10 ; G11C16/34

Abstract:
A read operation method of a nonvolatile memory includes selecting at least a first selection defence code from among a plurality of defence codes by using read voltage level determination information and read environment information, the read environment information including values respectively corresponding to a plurality of factors; determining a level of a read voltage for performing a read operation based on the first selection defence code; and performing the read operation by using the read voltage having the determined level.
Public/Granted literature
Information query