An etching effect prediction method includes determining a sample area of a mask pattern in which etch bias is to be predicted, determining input parameters indicating physical characteristics affecting an etching process undertaken in the sample area, comparing an output value obtained by inputting the input parameters to an artificial neural network, to a measured value of the etch bias that occurred in the sample area, and operating the artificial neural network until a difference between the output value and the measured value is equal to or less than a predetermined reference value.