A photoelectric conversion device comprises a semiconductor substrate including a photoelectric conversion portion, a silicon oxide film arranged above the photoelectric conversion portion, and an insulating film arranged between the photoelectric conversion portion and the silicon oxide film. An n-type first impurity region constituting part of the photoelectric conversion portion and a p-type second impurity region arranged between the insulating film and the first impurity region are provided in the semiconductor substrate. A portion of the insulating film above the second impurity region, and the second impurity region contain boron. An integrated value of a boron concentration from the surface of the semiconductor substrate to a first position where a boron concentration takes a minimal value in the second impurity region is larger than that from the surface of the semiconductor substrate to an upper surface of the silicon oxide film.