Invention Grant
- Patent Title: Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
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Application No.: US13892259Application Date: 2013-05-11
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Publication No.: US10686062B2Publication Date: 2020-06-16
- Inventor: Madhur Bobde , Anup Bhalla
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agent Bo-In Lin
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L29/423 ; H01L29/40 ; H01L21/22
Abstract:
This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate segment and a lower shield segment. The IGBT device may further include a dummy trench filled with a dielectric layer disposed at a distance away from the split-shielded trench gate. The IGBT device further includes a body region extended between the split-shielded trench gate and the dummy trench encompassing a source region surrounding the split-shielded trench gate near a top surface of the semiconductor substrate. The IGBT device further includes a heavily doped N region disposed below the body region and above a source-dopant drift region above a bottom body-dopant collector region at a bottom surface of the semiconductor substrate. In an alternative embodiment, the IGBT may include a planar gate with a trench shield electrode.
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