Invention Grant
- Patent Title: Process of forming high electron mobility transistor (HEMT) and HEMT formed by the same
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Application No.: US16127896Application Date: 2018-09-11
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Publication No.: US10686053B2Publication Date: 2020-06-16
- Inventor: Tadashi Watanabe , Hajime Matsuda
- Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Applicant Address: JP Kanagawa
- Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee Address: JP Kanagawa
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5beacd11
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L21/02 ; H01L21/3213 ; H01L21/285 ; H01L29/47 ; H01L21/311 ; H01L29/20 ; H01L29/423
Abstract:
A high electron mobility transistor (HEMT) includes a semiconductor layer on a substrate; an insulating film on the semiconductor layer; a gate electrode in contact with a surface of the semiconductor layer through an opening in the insulating film; and a conductive film provided between the insulating film and a portion of the gate electrode at peripheries of the opening. The insulating film and the conductive film are made of respective materials containing silicon (Si). The gate electrode includes a Schottky metal in contact with the semiconductor layer and a cover metal provided on the Schottky metal. The Schottky metal covers the conductive film thereunder.
Public/Granted literature
- US20190081154A1 PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEMT FORMED BY THE SAME Public/Granted day:2019-03-14
Information query
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