Invention Grant
- Patent Title: Method of making bipolar transistor
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Application No.: US15587005Application Date: 2017-05-04
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Publication No.: US10686036B2Publication Date: 2020-06-16
- Inventor: Fu-Hsiung Yang , Long-Shih Lin , Kun-Ming Huang , Chih-Heng Shen , Po-Tao Chu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/02 ; H01L21/265 ; H01L21/306 ; H01L29/66 ; H01L29/739 ; H01L21/266 ; H01L21/324 ; H01L29/06
Abstract:
A method of making a bipolar transistor includes patterning a first photoresist over a collector region of the bipolar transistor, the first photoresist defining a first opening. The method further includes performing a first implantation process through the first opening. The method further includes patterning a second photoresist over the collector region, the second photoresist defining a second opening different from the first opening. The method further includes performing a second implantation process through the second opening, wherein a dopant concentration resulting from the second implantation process is different from a dopant concentration resulting from the first implantation process.
Public/Granted literature
- US20170236904A1 METHOD OF MAKING BIPOLAR TRANSISTOR Public/Granted day:2017-08-17
Information query
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