According to one embodiment, a resistance change type memory includes: a semiconductor substrate having a first impurity concentration; a first interconnect extending in a first direction perpendicular to a surface of the semiconductor substrate; a second interconnect including a first semiconductor layer, the first semiconductor layer extending in a second direction parallel to the surface of the semiconductor substrate and having a second impurity concentration lower than the first impurity concentration; a memory layer between the first interconnect and the first semiconductor layer; a transistor including a second semiconductor layer between the first interconnect and the semiconductor substrate; and a third interconnect between the semiconductor substrate and the second semiconductor layer, and extending in the third direction.