Invention Grant
- Patent Title: Forming recesses in molding compound of wafer to reduce stress
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Application No.: US15289681Application Date: 2016-10-10
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Publication No.: US10685936B2Publication Date: 2020-06-16
- Inventor: Chun-Hung Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L25/065 ; H01L21/78 ; H01L23/00 ; H01L23/31 ; H01L21/784
Abstract:
A chip includes a semiconductor substrate, an electrical connector over the semiconductor substrate, and a molding compound molding a lower part of the electrical connector therein. A top surface of the molding compound is lower than a top end of the electrical connector. A recess extends from the top surface of the molding compound into the molding compound.
Public/Granted literature
- US20170025394A1 Packages with Stress-Reducing Structures and Methods of Forming Same Public/Granted day:2017-01-26
Information query
IPC分类:
