Invention Grant
- Patent Title: Plasma processing apparatus and device manufacturing method
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Application No.: US13392126Application Date: 2010-08-25
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Publication No.: US10685815B2Publication Date: 2020-06-16
- Inventor: Ryo Matsuhashi , Hiroshi Akasaka , Yoshimitsu Kodaira , Atsushi Sekiguchi , Naoko Matsui
- Applicant: Ryo Matsuhashi , Hiroshi Akasaka , Yoshimitsu Kodaira , Atsushi Sekiguchi , Naoko Matsui
- Applicant Address: JP Kawasaki-shi
- Assignee: CANON ANELVA CORPORATION
- Current Assignee: CANON ANELVA CORPORATION
- Current Assignee Address: JP Kawasaki-shi
- Agency: Venable LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@313ddb12 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4bc89a86
- International Application: PCT/JP2010/005228 WO 20100825
- International Announcement: WO2011/024446 WO 20110303
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at its closed end portion a protrusion 15 projecting toward the processing chamber 2.
Public/Granted literature
- US20120145671A1 PLASMA PROCESSING APPARATUS AND DEVICE MANUFACTURING METHOD Public/Granted day:2012-06-14
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