Invention Grant
- Patent Title: Radiation tolerant microstructured three dimensional semiconductor structure
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Application No.: US15494219Application Date: 2017-04-21
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Publication No.: US10685758B2Publication Date: 2020-06-16
- Inventor: Clint Frye , Roger A. Henderson , John Winter Murphy , Rebecca J. Nikolic , Dongxia Qu , Qinghui Shao , Mark A. Stoyer , Lars Voss
- Applicant: Lawrence Livermore National Security, LLC
- Applicant Address: US CA Livermore
- Assignee: Lawrence Livermore National Security, LLC
- Current Assignee: Lawrence Livermore National Security, LLC
- Current Assignee Address: US CA Livermore
- Agency: Zilka-Kotab
- Main IPC: G21H1/04
- IPC: G21H1/04 ; G21H1/06 ; G21H1/00

Abstract:
According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.
Public/Granted literature
- US20170221595A1 RADIATION TOLERANT MICROSTRUCTURED THREE DIMENSIONAL SEMICONDUCTOR STRUCTURE Public/Granted day:2017-08-03
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