Invention Grant
- Patent Title: Storage device
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Application No.: US16380514Application Date: 2019-04-10
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Publication No.: US10685691B2Publication Date: 2020-06-16
- Inventor: Bong Kil Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4827d725
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C11/00 ; G11C8/18 ; H03K3/03

Abstract:
A storage device includes a first memory chip including a first input pad configured to receive a first input signal, a first initializing circuit configured to generate a first initializing signal, a first input delay circuit configured to delay the first input signal by a first time to generate a first output signal, a first output pad configured to receive the first output signal and output the first output signal, a first clock delay circuit configured to delay the first initializing signal by a second time to generate a first clock signal, a second clock delay circuit configured to delay the first clock signal by a third time to generate a second clock signal, a first latch configured to store the first input signal based on the first clock signal, and a second latch configured to store the first input signal based on the second clock signal.
Public/Granted literature
- US20200090716A1 STORAGE DEVICE Public/Granted day:2020-03-19
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