Invention Grant
- Patent Title: Memory devices and methods which may facilitate tensor memory access with memory maps based on memory operations
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Application No.: US15493505Application Date: 2017-04-21
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Publication No.: US10684955B2Publication Date: 2020-06-16
- Inventor: Fa-Long Luo , Tamara Schmitz , Jeremy Chritz , Jaime Cummins
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G06F12/10
- IPC: G06F12/10 ; G06F12/02

Abstract:
Examples described herein include systems and methods which include an apparatus comprising a memory array including a plurality of memory cells and a memory controller coupled to the memory array. The memory controller comprises a memory mapper configured to configure a memory map on the basis of a memory command associated with a memory access operation. The memory map comprises a specific sequence of memory access instructions to access at least one memory cell of the memory array. For example, the specific sequence of memory access instructions for a diagonal memory command comprises a sequence of memory access instructions that each access a memory cell along a diagonal of the memory array.
Public/Granted literature
- US20180307614A1 MEMORY DEVICES AND METHODS WHICH MAY FACILITATE TENSOR MEMORY ACCESS Public/Granted day:2018-10-25
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