Invention Grant
- Patent Title: Method of pulsed laser-based large area graphene synthesis on metallic and crystalline substrates
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Application No.: US15116364Application Date: 2015-02-04
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Publication No.: US10683586B2Publication Date: 2020-06-16
- Inventor: Barbaros Ozyilmaz , Andreas Volker Stier , Chee Tat Toh , Antonio Helio Castro Neto
- Applicant: National University of Singapore
- Applicant Address: SG Singapore
- Assignee: National University of Singapore
- Current Assignee: National University of Singapore
- Current Assignee Address: SG Singapore
- Agency: Hamilton, Brook, Smith & Reynolds, P.C.
- International Application: PCT/SG2015/000029 WO 20150204
- International Announcement: WO2015/119572 WO 20150813
- Main IPC: H01L29/16
- IPC: H01L29/16 ; C30B25/10 ; C01B32/188 ; C01B32/186 ; C23C16/48 ; C30B1/02 ; C30B25/18 ; C30B29/02 ; B82Y40/00
Abstract:
A method of making graphene includes providing a seed gas in the presence of a metallic substrate, providing a pulsed, ultraviolet laser beam, and moving the substrate or the laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. In some instances, the substrate can have a surface with two-fold atomic symmetry. A method of recrystallizing graphene includes providing a pulsed, ultraviolet laser beam to a polycrystalline graphene sheet.
Public/Granted literature
- US20160340797A1 Method Of Pulsed Laser-Based Large Area Graphene Synthesis On Metallic And Crystalline Substrates Public/Granted day:2016-11-24
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