Invention Grant
- Patent Title: Semiconductor memory device and method for manufacturing same
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Application No.: US16439766Application Date: 2019-06-13
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Publication No.: US10682779B2Publication Date: 2020-06-16
- Inventor: Toshiyuki Sasaki
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/311 ; H01L23/528 ; B26B29/02 ; H01L27/11582 ; H01L27/11578 ; G11C16/10 ; H01L23/532 ; H01L27/1157 ; A45F5/02 ; B24B3/54 ; H01L29/10

Abstract:
According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.
Public/Granted literature
- US20190291290A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-09-26
Information query
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