Invention Grant
- Patent Title: Semiconductor device including boosting circuit with plural pump circuits
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Application No.: US16202006Application Date: 2018-11-27
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Publication No.: US10673326B2Publication Date: 2020-06-02
- Inventor: Masayuki Otsuka
- Applicant: LAPIS SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4868b1d4
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H02M3/07 ; G11C16/30 ; H01L27/06 ; G11C5/14

Abstract:
A semiconductor device including: a semiconductor substrate; at least one circuit block provided on a main surface of the semiconductor substrate and having a predetermined function; a wiring layer including plural metal layers that connect the circuit block; and plural capacitors including a first capacitor connected to the circuit block and that uses the plurality of metal layers, and a second capacitor that uses an active area disposed within the main surface of the semiconductor substrate, wherein at least one of the first capacitor and at least one of the second capacitor are stacked in a stacking direction of layers of the semiconductor.
Public/Granted literature
- US20190165673A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-05-30
Information query
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