Invention Grant
- Patent Title: Active layer structure, semiconductor light emitting element, and display apparatus
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Application No.: US15532094Application Date: 2015-10-01
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Publication No.: US10672944B2Publication Date: 2020-06-02
- Inventor: Yoshiaki Watanabe , Takayuki Kawasumi
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Chip Law Group
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@40a09190
- International Application: PCT/JP2015/005008 WO 20151001
- International Announcement: WO2016/098273 WO 20160623
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/30 ; H01L33/32 ; H01L33/06 ; G09G3/02 ; G09G3/32 ; G02B26/10 ; H01L33/20

Abstract:
A semiconductor light emitting element includes a first conductive layer, a second conductive layer, and an active layer provided between the first conductive layer and the second conductive layer. The first conductive layer has a current constriction structure, a current injection region being constricted in the current constriction structure. The active layer includes a plurality of quantum well layers, a first light emission wavelength being in a wavelength range of an intensity peak of an entire light emission spectrum, the first light emission wavelength corresponding to a light emission recombination level energy gap of a first quantum well layer of the plurality of quantum well layers, the first quantum well layer being provided at a position closest to the current constriction structure.
Public/Granted literature
- US20170288090A1 ACTIVE LAYER STRUCTURE, SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND DISPLAY APPARATUS Public/Granted day:2017-10-05
Information query
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