A semiconductor memory device according to an embodiment includes: a substrate; a plurality of first gate electrodes; a first semiconductor film facing the plurality of first gate electrodes; a first gate insulating film provided between the plurality of first gate electrodes and the first semiconductor film; a plurality of second gate electrodes that are further from the substrate than the plurality of first gate electrodes; a second semiconductor film facing the plurality of second gate electrodes; a second gate insulating film provided between the plurality of second gate electrodes and the second semiconductor film; a third gate electrode provided between the plurality of first gate electrodes and the plurality of second gate electrodes; a third semiconductor film facing the third gate electrode; and a third gate insulating film provided between the third gate electrode and the third semiconductor film, a width in a second direction of the third semiconductor film being larger than that of a one end of the second semiconductor film, and smaller than that of the other end of the first semiconductor film.