Invention Grant
- Patent Title: Precessional spin current structure with non-magnetic insertion layer for MRAM
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Application No.: US15445362Application Date: 2017-02-28
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Publication No.: US10665777B2Publication Date: 2020-05-26
- Inventor: Bartlomiej Adam Kardasz , Mustafa Michael Pinarbasi
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer LLP
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; H01L43/12 ; G11C11/16
Abstract:
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic structure in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate. The precessional spin current magnetic layer a first and second precessional spin current ferromagnetic layer separated by a nonmagnetic precessional spin current insertion layer.
Public/Granted literature
- US20180248110A1 PRECESSIONAL SPIN CURRENT STRUCTURE FOR MRAM Public/Granted day:2018-08-30
Information query
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