Invention Grant
- Patent Title: Light emitting diode and fabrication method therof
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Application No.: US15849566Application Date: 2017-12-20
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Publication No.: US10665748B2Publication Date: 2020-05-26
- Inventor: Jie Zhang , Xiangxu Feng , Chengxiao Du , Jianming Liu , Chen-ke Hsu
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@41856f9e
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/10 ; H01L33/22 ; H01L33/32 ; H01L33/02 ; H01L33/00 ; H01L33/04

Abstract:
A light-emitting diode includes from bottom to up: a substrate, a first-conductive type semiconductor layer, a super lattice, a multi-quantum well layer and a second-conductive type semiconductor layer. At least one layer of granular medium layer is inserted in the super lattice. The granular medium layer is used for forming V pits with different widths and depths in the super lattice. The multi-quantum well layer fills up the V pits and is over the top surface of the super lattice. The number of micro-particle generations, positions and densities can be adjusted by introducing granular medium layers and controlling the number of layers, position and growth conditions during super lattice growth process, to ensure V pits of different depths and densities. This can change hole injection effect, effectively improve hole injection efficiency and distribution uniformity in all quantum wells, thus improving LED light-emitting efficiency.
Public/Granted literature
- US20180138358A1 Light Emitting Diode and Fabrication Method Thereof Public/Granted day:2018-05-17
Information query
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