Invention Grant
- Patent Title: Compound semiconductor device and fabrication method
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Application No.: US16238094Application Date: 2019-01-02
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Publication No.: US10665710B2Publication Date: 2020-05-26
- Inventor: Atsushi Yamada , Junji Kotani
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@a2dae82
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/778 ; H01L29/205 ; H01L29/10 ; H01L29/45 ; H01L21/02 ; H01L21/76 ; H01L21/311 ; H01L21/285 ; H01L29/66 ; H01L23/31 ; H01L23/495 ; H01L29/20 ; H01L21/56 ; H02M1/42 ; H02M7/5387 ; H03F3/19 ; H03F1/32 ; H03F3/21 ; H02M1/00 ; H01L21/762 ; H02M3/335
Abstract:
A disclosed compound semiconductor device includes a channel layer configured to generate carriers; a spacer layer of Aly1Ga1-y1N (0.20 y2.
Public/Granted literature
- US20190214494A1 COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD Public/Granted day:2019-07-11
Information query
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