Invention Grant
- Patent Title: Vertical transistors having improved gate length control
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Application No.: US15803935Application Date: 2017-11-06
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Publication No.: US10665694B2Publication Date: 2020-05-26
- Inventor: Kangguo Cheng , Xin Miao , Wenyu Xu , Chen Zhang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L27/24 ; H01L29/423 ; H01L29/786

Abstract:
Embodiments of the invention form a channel fin across from a major surface of a substrate, wherein a top surface of the channel fin extends substantially horizontally with respect to the major surface. A gate is formed across from the major surface and along a sidewall surface of the channel fin, wherein a first top surface of the gate is above the top surface of the channel fin and extends substantially horizontally with respect to the major surface. A second top surface of the gate is defined by a trench formed through an exposed sidewall portion of the gate in a direction that is substantially horizontal with respect to the major surface, wherein a gate length dimension of the initial gate is defined by a distance from a bottom surface of the gate to the second top surface of the gate.
Public/Granted literature
- US20190058047A1 VERTICAL TRANSISTORS HAVING IMPROVED GATE LENGTH CONTROL Public/Granted day:2019-02-21
Information query
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