Invention Grant
- Patent Title: Silicon carbide semiconductor device and method for manufacturing same
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Application No.: US16066777Application Date: 2016-11-28
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Publication No.: US10665679B2Publication Date: 2020-05-26
- Inventor: Tomokatsu Watanabe , Shiro Hino , Yusuke Yamashiro , Toshiaki Iwamatsu
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7c7ed189
- International Application: PCT/JP2016/085152 WO 20161128
- International Announcement: WO2017/138221 WO 20170817
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/16 ; H01L29/12 ; H01L29/78 ; H01L29/739 ; H01L21/04 ; H01L29/04 ; H01L29/08 ; H01L29/10 ; H01L29/36 ; H01L29/49 ; H01L29/66
Abstract:
A silicon carbide semiconductor device includes: an n-type drift layer 2 provided within an SiC layer 30; a plurality of p-type well regions 3; a JFET region JR serving as a part of the drift layer 2 sandwiched between the well regions 3; and a gate insulating film 6 and a gate electrode 7 at least covering the JFET region JR. The gate insulating film 6 and the gate electrode 7 include a different-element-containing region 10 containing an element that is different from elements constituting the gate insulating film 6 and the gate electrode 7.
Public/Granted literature
- US20190006471A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-01-03
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