Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16216815Application Date: 2018-12-11
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Publication No.: US10665677B2Publication Date: 2020-05-26
- Inventor: Katsumi Nakamura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/265 ; H01L21/322 ; H01L29/36 ; H01L29/861 ; H01L29/06 ; H01L29/739 ; H01L29/868 ; H01L21/225 ; H01L21/266 ; H01L21/324 ; H01L27/06 ; H01L29/66 ; H01L29/40 ; H01L29/16 ; H01L29/20
Abstract:
The present invention relates to a vertical semiconductor device such as an IGBT or a diode which includes an N buffer layer formed in the undersurface of and adjacent to an N− drift layer. A concentration slope δ, which is derived from displacements in a depth TB (μm) and an impurity concentration CB (cm−3), from the upper surface to the lower surface in a main portion of the N buffer layer satisfies a concentration slope condition defined by {0.03≤δ≤0.7}.
Public/Granted literature
- US20190123145A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-25
Information query
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