Invention Grant
- Patent Title: FinFET semiconductor device with germanium diffusion over silicon fins
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Application No.: US16591949Application Date: 2019-10-03
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Publication No.: US10665674B2Publication Date: 2020-05-26
- Inventor: Yi-Jing Lee , Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L27/088 ; H01L21/8234 ; H01L21/02 ; H01L21/225 ; H01L21/306 ; H01L21/3065 ; H01L21/324 ; H01L29/06 ; H01L29/161 ; H01L29/78 ; H01L29/165
Abstract:
A method for manufacturing a semiconductor device is described that comprises providing a substrate, forming a plurality of fins having a first semiconductor material, replacing a first portion of at least one of the fins with a second semiconductor material, and distributing the second semiconductor material from the first portion to a second portion of the at least one of the fins.
Public/Granted literature
- US20200035789A1 FinFET Semiconductor Device with Germanium Diffusion Over Silicon Fins Public/Granted day:2020-01-30
Information query
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