Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US16082957Application Date: 2016-07-20
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Publication No.: US10665670B2Publication Date: 2020-05-26
- Inventor: Kazutoyo Takano , Kazushige Matsuo , Masayoshi Hirao , Junji Yahiro
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/071276 WO 20160720
- International Announcement: WO2018/016029 WO 20180125
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/304 ; H01L29/78 ; H01L29/739 ; H01L29/12 ; H01L27/04 ; H01L21/04 ; H01L21/683 ; H01L27/06 ; H01L29/10 ; H01L29/16 ; H01L29/20 ; H01L29/66 ; H01L29/861
Abstract:
A semiconductor device according to the present invention includes a substrate having a cell portion and a terminal portion surrounding the cell portion, a surface structure provided on the substrate, and a back surface electrode provided on the back surface of the substrate, the surface structure includes a convex portion protruding upward above the cell portion, and at least a part of the cell portion is thinner than the terminal portion.
Public/Granted literature
- US20190157389A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-05-23
Information query
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