Invention Grant
- Patent Title: Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens
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Application No.: US16049048Application Date: 2018-07-30
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Publication No.: US10665627B2Publication Date: 2020-05-26
- Inventor: Shih-Hsun Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A method for forming an image sensor device is provided. The method includes forming an isolation structure in a substrate. The method includes forming a light-sensing region in the substrate. The isolation structure surrounds the light-sensing region. The method includes forming a grid layer over the substrate. The grid layer is over the isolation structure and has an opening over the light-sensing region. The method includes forming a first lens in or over the opening. The method includes forming a second lens over the first lens and the grid layer.
Public/Granted literature
- US20190148434A1 IMAGE SENSOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2019-05-16
Information query
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