Invention Grant
- Patent Title: Semiconductor device, semiconductor wafer, memory device, and electronic device
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Application No.: US16036282Application Date: 2018-07-16
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Publication No.: US10665604B2Publication Date: 2020-05-26
- Inventor: Hajime Kimura , Tatsunori Inoue
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@710e365e
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L29/78 ; H01L27/11524 ; H01L27/11529 ; H01L29/66 ; H01L29/24 ; H01L27/1157 ; H01L29/788 ; H01L21/28 ; H01L27/11573 ; H01L21/02
Abstract:
An object is to provide a semiconductor device with large memory capacity. The semiconductor device includes first to seventh insulators, a first conductor, and a first semiconductor. The first conductor is positioned on a first top surface of the first insulator and a first bottom surface of the second insulator. The third insulator is positioned in a region including a side surface and a second top surface of the first insulator, a side surface of the first conductor, and a second bottom surface and a side surface of the second insulator. The fourth insulator, the fifth insulator, and the first semiconductor are sequentially stacked on the third insulator. The sixth insulator is in contact with the fifth insulator in a region overlapping the first conductor. The seventh insulator is positioned in a region including the first semiconductor and the sixth insulator.
Public/Granted literature
- US20190027493A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, MEMORY DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2019-01-24
Information query
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