Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15914130Application Date: 2018-03-07
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Publication No.: US10665601B2Publication Date: 2020-05-26
- Inventor: Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7a2655e7
- Main IPC: H01L27/11524
- IPC: H01L27/11524 ; H01L27/1157 ; H01L27/11556 ; H01L27/11519 ; H01L21/768 ; H01L23/522 ; H01L27/11582 ; H01L27/11565
Abstract:
A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first and second vertical conductive patterns isolated from each other by a first slit. The semiconductor device may include at least one first half conductive pattern extending toward a first region disposed at one side of the first slit from the first vertical conductive pattern. The semiconductor device may include at least one second half conductive pattern extending toward a second region disposed at the other side of the first slit from the second vertical conductive pattern.
Public/Granted literature
- US20190035797A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-01-31
Information query
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