Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
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Application No.: US16002100Application Date: 2018-06-07
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Publication No.: US10665587B2Publication Date: 2020-05-26
- Inventor: Keiji Ikeda , Tsutomu Tezuka
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4e336201
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/768 ; H01L27/06 ; H01L21/822 ; H01L23/522 ; H01L27/12 ; H01L21/8234 ; H01L23/535 ; H01L29/06 ; H01L29/786 ; H01L23/485
Abstract:
According to one embodiment, A semiconductor device includes: a first semiconductor layer; and a plurality of first transistors including a plurality of first gate structures provided on the first semiconductor layer, a first channel region provided in the first semiconductor layer and under the first gate structure, and a plurality of first diffusion regions provided in the first semiconductor layer in a manner to sandwich the first channel region.
Public/Granted literature
- US20180301446A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2018-10-18
Information query
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