Invention Grant
- Patent Title: Structure and method for alignment marks
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Application No.: US14679326Application Date: 2015-04-06
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Publication No.: US10665585B2Publication Date: 2020-05-26
- Inventor: Ming-Chang Wen , Chun-Kuang Chen , Hsien-Cheng Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/66 ; H01L29/49 ; H01L29/51
Abstract:
The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a plurality of gate stacks formed on the semiconductor substrate and configured as an alignment mark; doped features formed in the semiconductor substrate and disposed on sides of each of the plurality of gate stacks; and channel regions underlying the plurality of gate stacks and free of channel dopant.
Public/Granted literature
- US20150214225A1 Structure and Method for Alignment Marks Public/Granted day:2015-07-30
Information query
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