Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15997338Application Date: 2018-06-04
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Publication No.: US10665557B2Publication Date: 2020-05-26
- Inventor: Jung-Hoon Han , Sungjin Kim , Junyong Noh , Heonjun Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5c21732b
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/58 ; H01L21/66 ; H01L21/78 ; H01L23/31 ; H01L21/683

Abstract:
A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a lower dielectric layer on the semiconductor substrate, a chip pad on the lower dielectric layer of the chip region, an upper dielectric layer on the lower dielectric layer, which includes a first opening exposing the chip pad on the chip region and a second opening exposing the lower dielectric layer on the edge region, and a redistribution pad connected to the chip pad. The redistribution pad includes a via portion in the first opening and a pad portion extending from the via portion onto the upper dielectric layer.
Public/Granted literature
- US20190035750A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-01-31
Information query
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