Invention Grant
- Patent Title: Semiconductor device with an interconnection layer and method of manufacturing the same
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Application No.: US16592869Application Date: 2019-10-04
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Publication No.: US10665502B2Publication Date: 2020-05-26
- Inventor: Kazuyuki Omori , Seiji Muranaka , Kazuyoshi Maekawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Rensas Electronics Corporation
- Current Assignee: Rensas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: SGPatents PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@13b2e248
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L21/4763 ; H01L21/768 ; H01L23/528 ; H01L23/532 ; C23C14/06 ; C23C14/16 ; C23C14/34 ; H01L21/285
Abstract:
Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.
Public/Granted literature
- US20200035552A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-01-30
Information query
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