A semiconductor storage element includes a first transistor including a gate insulator film at least partially formed by a ferroelectric material, a second transistor connecting with a gate of the first transistor at one of a source or a drain, and a third transistor connecting with a drain of the first transistor at one of a source or a drain. The semiconductor storage element is arranged in a matrix, and each of the second and third transistors connects with a word line at a gate and connects with a bit line at another one of the source or the drain.