Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16288395Application Date: 2019-02-28
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Publication No.: US10659039B2Publication Date: 2020-05-19
- Inventor: Masatoshi Shinohara
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: White & Case LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@15ff07fc
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K17/687 ; H02J7/00 ; H01L29/78

Abstract:
A semiconductor device according to one embodiment comprises a first transistor, a second transistor, a switch, and a first control circuit. The first transistor including, one end of a current path connected to a first node, another end of the current path connected to a second node, and a gate connected to a third node. The second transistor including, one end of a current path connected to the second node, another end of the current path connected to a fourth node, and a gate connected to the third node. The switch configured to connect the second node and the third node. The first control circuit configured to control the switch.
Public/Granted literature
- US20200021287A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-01-16
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