Invention Grant
- Patent Title: Trans-impedance amplifier
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Application No.: US16507684Application Date: 2019-07-10
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Publication No.: US10658985B2Publication Date: 2020-05-19
- Inventor: Hehong Zou
- Applicant: Hangzhou Hongxin Microelectronics Technology Co., Ltd.
- Applicant Address: CN Hangzhou
- Assignee: HANGZHOU HONGXIN MICROELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: HANGZHOU HONGXIN MICROELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Hangzhou
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@71369639
- Main IPC: H03F3/08
- IPC: H03F3/08 ; H03F1/26 ; H03F3/45 ; H03G3/30

Abstract:
The present disclosure provides a trans-impedance amplifier, comprising: an inverting amplifier circuit, having an input end and an output end. The input end is coupled to an optical diode and is used for accessing an input voltage signal, and the output end is used for outputting an amplified voltage signal. The inverting amplifier circuit comprises at least three sequentially-connected amplifier units. Each of the amplifier units comprises two mutually-coupled N-type transistors, wherein one N-type transistor is used for receiving an input voltage, and the other N-type transistor is used for receiving a DC voltage signal. A common connection end of the two N-type transistors is used for outputting an amplified voltage signal, and the N-type transistor used for receiving the DC voltage signal adopts a native NFET. The trans-impedance amplifier further comprises a feedback resistor coupled to the input end and the output end of the inverting amplifier circuit.
Public/Granted literature
- US20190334484A1 TRANS-IMPEDANCE AMPLIFIER Public/Granted day:2019-10-31
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