The disclosure relates to a Vertical Cavity Surface Emitting Laser (100) comprising a first electrical contact (105), a substrate (110), a first Distributed Bragg Reflector (115), an active layer (120), a second Distributed Bragg Reflector (130) and a second electrical contact (135). The Vertical Cavity Surface Emitting Laser comprises at least two current aperture layers (125) arranged below or above the active layer (120), wherein each of the current aperture layers (125) comprises one AlyGa(1−y)As-layer, wherein a first current aperture layer (125a) of the at least two current aperture layers (125) is arranged nearer to the active layer (120) as a second current aperture layer (125b) of the at least two current aperture layers (125), wherein the first current aperture layer (125a) comprises a first current aperture (122a) with a bigger size as a second current aperture (122b) of the second current aperture layer (125b). The disclosure also relates to a method of manufacturing such a VCSEL (100).