Invention Grant
- Patent Title: Quantum dot light emitting device, method of manufacturing the same, and quantum dot light emitting display device
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Application No.: US16168239Application Date: 2018-10-23
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Publication No.: US10658606B2Publication Date: 2020-05-19
- Inventor: Zhuo Chen , YuJu Chen , Dong Li
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@658f53f
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/56

Abstract:
A quantum dot light emitting device is disclosed. The quantum dot light emitting device includes a first electrode and a second electrode. The quantum dot light emitting device includes a quantum dot light emitting layer interposed between the first electrode and the second electrode. The quantum dot light emitting device includes a first hole transport layer located between the quantum dot light emitting layer and the first electrode. The quantum dot light emitting device includes a hole injection layer located between the first hole transport layer and the first electrode. The quantum dot light emitting device includes an electron transport layer located between the quantum dot light emitting layer and the second electrode. The quantum dot light emitting device includes a filling layer located between the electron transport layer and the quantum dot light emitting layer and embedded in the quantum dot light emitting layer.
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