A Schottky barrier diode includes a semiconductor layer having a major surface, a diode region of a first conductivity type formed in a surface layer portion of the semiconductor layer, a first conductivity type impurity region formed in the surface layer portion of the semiconductor layer and electrically connected to the diode region, a first electrode layer formed on the major surface of the semiconductor layer and forming a Schottky junction with the diode region, a second electrode layer formed on the major surface of the semiconductor layer and forming an ohmic junction with the first conductivity type impurity region, and a contact electrode layer formed on a peripheral region of the major surface of the semiconductor layer surrounding the first electrode layer so as to be electrically connected to the diode region via the semiconductor layer and being electrically connected to the second electrode layer.