Invention Grant
- Patent Title: Magnesium zinc oxide-based high voltage thin film transistor
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Application No.: US16326575Application Date: 2017-08-18
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Publication No.: US10658518B2Publication Date: 2020-05-19
- Inventor: Yicheng Lu , Wen-Chiang Hong , Chieh-Jen Ku , Kuang Sheng , Rui Li
- Applicant: Rutgers, The State University of New Jersey
- Applicant Address: US NJ New Brunswick
- Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
- Current Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
- Current Assignee Address: US NJ New Brunswick
- Agency: Fox Rothschild LLP
- International Application: PCT/US2017/047686 WO 20170818
- International Announcement: WO2018/035502 WO 20180222
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; C23C16/40 ; H01L29/417 ; H01L21/02 ; H01L29/423 ; H01L29/49
Abstract:
Magnesium Zinc Oxide (MZO)—based high voltage thin film transistor (MZO-HVTFT) is built on a transparent substrate, such as glass. The device has the circular drain and ring-shaped source and gate to reduce non-uniformity of the electric field distribution. Controlled Mg doping in the channel and modulated Mg doping in a transition layer located at the channel-gate dielectric interface improve the device's operating stability and increase its blocking voltage capability over 600V. The MZO HVTFT can be used for fabricating the micro-inverter in photovoltaic system on glass (PV-SOG), and for self-powered smart glass.
Public/Granted literature
- US20190237582A1 MAGNESIUM ZINC OXIDE-BASED HIGH VOLTAGE THIN FILM TRANSISTOR Public/Granted day:2019-08-01
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