Invention Grant
- Patent Title: Fin field effect transistor and fabrication method thereof
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Application No.: US16117051Application Date: 2018-08-30
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Publication No.: US10658512B2Publication Date: 2020-05-19
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4446ebcb
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/28 ; H01L29/423 ; H01L27/088 ; H01L29/786 ; H01L21/8234
Abstract:
A fabrication method for a fin field effect transistor is provided. The method includes forming a base substrate including a substrate and fins protruding from the substrate. The substrate includes a first region and a second region. The fins include at least a first fin protruding from the substrate in the first region, and at least a second fin protruding from the substrate in the second region. The second fin includes a sacrificial layer and a semiconductor layer covering the sacrificial layer. Then a first dummy gate oxidation layer is formed on a portion of the first fin by an in-situ steam generation (ISSG)-decoupled plasma nitrogen (DPN) treatment process. A second dummy gate oxidation layer is formed on a portion of the second fin by an atomic layer deposition process.
Public/Granted literature
- US20190081169A1 FIN FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF Public/Granted day:2019-03-14
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