Invention Grant
- Patent Title: FinFET device
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Application No.: US15817648Application Date: 2017-11-20
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Publication No.: US10658509B2Publication Date: 2020-05-19
- Inventor: Chia Tai Lin , Yih-Ann Lin , An-Shen Chang , Ryan Chia-Jen Chen , Chao-Cheng Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/66 ; H01L29/40 ; H01L21/8234 ; H01L21/84
Abstract:
A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. The dielectric trench has a vertical profile. The semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. The second portion of the plurality of fins have a rounded-convex-shape top profile.
Public/Granted literature
- US20180090607A1 FinFET Device Public/Granted day:2018-03-29
Information query
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